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| MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# EGP10A THRU EGP10K * * * * Superfast recovery time for high efficiency Glass passivated cavity-free junction, Plastic Case Low forward voltage, high current capability Low leakage current * * * Maximum Ratings Operating Temperature: -55OC to +150 OC Storage Temperature: -55OC to +150 OC Typical Thermal Resistance: 50OC/W Junction to Ambient Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 300V 400V 600V 800V O 1.0 Amp Glass Passivated High Efficient Rectifiers 50 to 800 Volts DO-41 MCC Part Number EGP10A EGP10B EGP10D EGP10F EGP10G EGP10J EGP10K Maximum RMS Voltage 35V 70V 140V 210V 280V 420V 560V Maximum DC Blocking Voltage D 50V 100V 200V 300V 400V 600V 800V TA = 55OC 8.3ms, half sine A Cathode Mark B Electrical Characteristics @ 25 C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage EGP10A-10D EGP10F-10G EGP10J -10K Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time EGP10A-10G EGP10J-10K Typical Junction Capacitance EGP10A-10D EGP10F-10K IF(AV) IFSM 1.0 A 30A D C VF 0.95V 1.25V 1.70V 5.0uA 100uA IF=1.0A TA=25OC DIMENSIONS INCHES MIN .166 .080 .028 1.000 MM MIN 4.10 2.00 .70 25.40 IR trr 50nS 75nS TA = 25 C TA = 125OC IF=0.5A, IR=1.0A, IRR=0.25A TJ=25OC Measured at 1.0MHz, VR=4.0V O DIM A B C D MAX .205 .107 .034 --- MAX 5.20 2.70 .90 --- NOTE CJ 22pF 15pF www.mccsemi.com EGP10A thru EGP10K Figure 1 Typical For ward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 EGP10A -EGP10D EGP10F-EGP10K MCC Figure 2 Forward Derating Curve 1.2 1.0 25OC .8 150OC .6 Amps .4 .2 Resistive or Inductive Load 0.375"(9.5mm) Lead Length 0 50 75 100 O 0 125 150 175 .02 .01 .4 .6 .8 1.0 1.2 1.4 C Average Forward Rectified Current - Amperes versus Ambient Temperature - OC Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 2 4 10 Volts 20 40 100 200 400 1000 EGP10A -EGP10D EGP10F - EGP10K TJ =25OC Junction Capacitance - pF versus Reverse Voltage - Volts www.mccsemi.com EGP10A thru EGP10K Figure 4 Peak Forward Surge Current 60 50 40 30 Amps 20 10 0 1 2 4 6 8 10 20 Cycles Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - Cycles 40 60 80 100 MCC Figure 5 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 10 trr +0.5A 0 25Vdc Pulse Generator Note 2 1 Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm www.mccsemi.com |
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